4.8 Article

Electronic States at the Graphene-Hexagonal Boron Nitride Zigzag Interface

期刊

NANO LETTERS
卷 14, 期 9, 页码 5128-5132

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl501895h

关键词

Graphene; hexagonal boron nitride; interface; zigzag; scanning tunneling microscopy (STM)

资金

  1. European Research Council [278698]
  2. Finnish Academy of Science and Letters
  3. Academy of Finland (Centre of Excellence in Low Temperature Quantum Phenomena and Devices) [250280]
  4. Academy of Finland (Centre of Excellence in Computational Nanoscience) [251748]
  5. European Research Council (ERC) [278698] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

The electronic properties of graphene edges have been predicted to depend on their crystallographic orientation. The so-called zigzag (ZZ) edges haven been extensively explored theoretically and proposed for various electronic applications. However, their experimental study remains challenging due to the difficulty in realizing clean ZZ edges without disorder, reconstructions, or the presence of chemical functional groups. Here, we propose the ZZ-terminated, atomically sharp interfaces between graphene and hexagonal boron nitride (BN) as experimentally realizable, chemically stable model systems for graphene ZZ edges. Combining scanning tunneling microscopy and numerical methods, we explore the structure of grapheneBN interfaces and show them to host localized electronic states similar to those on the pristine graphene ZZ edge.

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