期刊
NANO LETTERS
卷 14, 期 2, 页码 682-686出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl403941a
关键词
Carbon nanotube; transistor; stretchable electronics; ion gel gate dielectric
类别
资金
- University of Wisconsin-Madison Center of Excellence for Materials Research and Innovation [DMR-1121288]
- DOE Office of Science Early Career Research Program through the Office of Basic Energy Sciences [DE-SC0006414]
- Department of Defense (DOD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program
- National Science Foundation [CBET-1033346, DMR-0905861]
- AFOSR [FA9550-091-0482]
Field-effect transistors (FETs) that are stretchable up to 50% without appreciable degradation in performance are demonstrated. The FETs are based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as the channel, a flexible ion gel as the dielectric, and buckled metal films as electrodes. The buckling of the CNT film enables the high degree of stretchability while the flexible nature of the ion gel allows it to maintain a high quality interface with the CNTs during stretching. An excellent on/off ratio of >10(4), a field-effect mobility of 10 cm(2).V-1.s(-1), and a low operating voltage of <2 V are achieved over repeated mechanical cycling, with further strain accommodation possible. Deformable FETs are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins.
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