期刊
NANO LETTERS
卷 14, 期 4, 页码 1909-1913出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl4046922
关键词
Molybdenum disulphite; chemical vapor deposition; electronic transport; two-dimensional crystal
类别
资金
- Singapore National Research Foundation under NRF Research Fellowship [NRF-NRFF2011-02, NRF-NRFF2012-01]
- NRF-CRP award Toward Commercialization of Graphene Technologies [R-144-000-315-281]
- NRF-CRP award Novel 2D materials with tailored properties: beyond graphene [R-144-000-295-281]
Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V-1 s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.
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