期刊
NANO LETTERS
卷 13, 期 7, 页码 3274-3280出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl401483e
关键词
Nanorod; nanocolumn; semiconductor; model; nucleation; growth
类别
资金
- Deutsche Forschungsgemeinschaft (DFG) [KA 3262/2-2]
- EU-FP7 [GECCO 280694-2]
- [CAM/P2009/ESP-1503]
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets toward the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratio.
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