期刊
NANO LETTERS
卷 13, 期 5, 页码 1991-1995出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl400044m
关键词
Degenerate doping; few-layer; TMDCs; MoS2; WSe2; potassium; surface charge transfer
类别
资金
- Office of Science, Office of Basic Energy Sciences, and Division of Materials Sciences and Engineering of the U.S. Department of Energy [De-Ac02-05Ch11231]
- Electronic Materials (E-Mat) program
- NSF E3S Center
- World Class University program at Sunchon National University
- NSF
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1124894] Funding Source: National Science Foundation
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of similar to 1.0 x 10(13) cm(-2) and 2.5 X 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of similar to 110 cm(2)/V.s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with graphene. The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics.
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