期刊
NANO LETTERS
卷 13, 期 6, 页码 2548-2552出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl400620f
关键词
GaAs; nanowire; high-electron-mobility transistors; III-V; VLSI
类别
资金
- National Science Foundation [1006581, 1001928]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006581] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1001928] Funding Source: National Science Foundation
High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 mu S/mu m, 435 mu A/mu m, and similar to 2.9 x 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.
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