期刊
NANO LETTERS
卷 13, 期 2, 页码 374-377出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl303510h
关键词
Gallium nitride; light-emitting diodes; nanowires; photoconductivity; optical interconnects
类别
资金
- National Institute of Standards and Technology (NIST)
- DARPA Center on Nanoscale Science and Technology for Integrated Micro/Nano-Electromechanical Transducers (iMINT)
- DARPA N/MEMS S&T Fundamentals program by the Space and Naval Warfare Systems Center Pacific (SPAWAR) [N66001-10-1-4007]
In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据