期刊
NANO LETTERS
卷 13, 期 7, 页码 3213-3217出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl401283q
关键词
Resistive switching memory; memristor; nanocomposite materials; nanometallic switch; nanoelectronics
Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system an devices and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 x 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.
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