期刊
NANO LETTERS
卷 13, 期 4, 页码 1435-1439出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl304305x
关键词
Graphene; transistor; hot electrons; hot carrier transport; tunneling
类别
资金
- European Commission through a STREP project (GRADE) [317839]
- ERC Advanced Investigator Grant (OSIRIS) [228229]
- ERC Starting Grant (InteGraDe) [307311]
- German Research Foundation (DFG) [LE 2440/1-1]
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).
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