期刊
NANO LETTERS
卷 13, 期 11, 页码 5085-5089出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl402244p
关键词
InGaAs nanowires; zinc blende; polarity; misfit strain; nonuniform composition; core-shell
类别
资金
- Australian Research Council
Manipulating the composition and morphology of semiconductor nanowires in a precisely controlled fashion is critical in developing nanowire devices. This is particularly true for ternary III-V nanowires. Many studies have shown the complexities within those nanowires. Here we report our findings of compositional irregularity in the shells of core shell InGaAs nanowires with zinc-blende structure. Such an effect is caused by the crystal polarity within III-V zinc-blende lattice and the one-dimensional nature of nanowires that allows the formation of opposite polar surfaces simultaneously on the nanowire sidewalls. This polarity-driven effect in III-V nanowires may be utilized in manipulating the composition and morphology of III-V nanowires for device applications.
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