期刊
NANO LETTERS
卷 13, 期 8, 页码 3864-3869出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl401934a
关键词
Flexible electronics; thin-film transistors; semiconducting nanotube networks; printable electronics
类别
资金
- NSF NASCENT Center
- World Class University program at Sunchon National University
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0847076] Funding Source: National Science Foundation
Fully printed transistors are a key component of ubiquitous flexible electronics. In this work, the advantages of an inverse gravure printing technique and the solution processing of semiconductor-enriched single-walled carbon nanotubes (SWNTs) are combined to fabricate fully printed thin-film transistors on mechanically flexible substrates. The fully printed transistors are configured in a top-gate device geometry and utilize silver metal electrodes and an inorganic/organic high-kappa (similar to 17) gate dielectric. The devices exhibit excellent performance for a fully printed process, with mobility and on/off current ratio of up to similar to 9 cm(2)/(V s) and 10(5), respectively. Extreme bendability is observed, without measurable change in the electrical performance down to a small radius of curvature of 1 mm. Given the high performance of the transistors, our high-throughput printing process serves as an enabling nanomanufacturing scheme for a wide range of large-area electronic applications based on carbon nanotube networks.
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