期刊
NANO LETTERS
卷 13, 期 10, 页码 4581-4586出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl400197w
关键词
Graphene; suspenced; high-field; thermal conductivity; drift velocity; breakdown
类别
资金
- Nanotechnology Research Initiative (NRI)
- Office of Naval Research Young Investigator Award [ONR-YIP N00014-10-1-0853]
- National Science Foundation [NSF CAREER ECCS 0954423]
- NSF CAREER [DMR-1056859]
- NSF Graduate Research Fellowship
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1056859] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0954423] Funding Source: National Science Foundation
We study the intrinsic transport properties of suspended graphene devices at ''aigh fields Wpm) and high temperatures (>= 1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6 X 10(7) cm/s (1.7 X 107 cm/s) and peak (average) therm:.1 conductivity of 530 W K-1 (310 W ICI) at 1000 K The saturation velocity is 2 4 times and the thermal conductivity 10-17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper di:crease at high temperature than in graphite, consistent.wift, stronger effects of secondorder three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of cleaner devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at 2230 K in vacuum, highlighting remaining unknown:, under extreme operating conditions.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据