期刊
NANO LETTERS
卷 13, 期 4, 页码 1687-1692出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl400196z
关键词
Plasmon; nanoparticle; nanowire; hot electron; embedded; Schottky
类别
资金
- Robert A. Welch Foundation [C-1220, C-1222]
- National Security Science and Engineering Faculty Fellowship (NSSEFF) [N00244-09-1-0067]
- Air Force Office of Scientific Research (AFOSR) [FA9550-10-1-0469]
- NSF MRI [ECCS 1040478]
- Army Research Office
- Office of Naval Research
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1040478] Funding Source: National Science Foundation
When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25X over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.
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