期刊
NANO LETTERS
卷 14, 期 1, 页码 71-77出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl403204k
关键词
Silicon; quantum dot; large quantum-level spacings; room temperature
类别
资金
- National Research Foundation of Korea through the Basic Science Research Program [NRF-2010-0023085]
- Leading Foreign Research Institute Recruitment Program [NRF-2013-044975]
- Brain Korea 21+ Program [22A20130000037]
- Korean government of Ministry of Education (MoE)
- National Research Foundation of Korea [22A20130000037, 2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical. applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.
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