期刊
NANO LETTERS
卷 13, 期 4, 页码 1555-1558出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl304715p
关键词
STEM lithography; electron beam lithography; high voltage electron beam lithography; hydrogen silsesquioxane; point spread function; EELS
类别
资金
- Center for Excitonics, an Energy Frontier Research Center
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001088]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- National Science Foundation [DMR-08-19762]
We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
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