期刊
NANO LETTERS
卷 13, 期 6, 页码 2647-2653出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl400792w
关键词
p-type ZnO nanowire; piezotronic effect; piezotronics; piezo-phototronics; energy harvesting
类别
资金
- Airforce, U.S. Department of Energy, Office of Basic Energy Sciences [DEFG02-07ER46394]
- NSF
- Knowledge Innovation Program of the Chinese Academy of Sciences [KJCX2-YW-M13]
- IGERT: Nanostructured Materials for Energy Storage and Conversion, NSF
Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 mu m in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2).V-1.s(-1), and 2.6 X 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2).V-1.s(-1), and 3.8 X 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as synthesized Sb-doped p-type ZnO NWs and reported for the first time strain gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.
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