期刊
NANO LETTERS
卷 13, 期 9, 页码 4492-4498出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl402424x
关键词
STM; nanowire; surface; III-V; GaAs; STS
类别
资金
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Swedish energy agency
- Crafoord Foundation
- Knut and Alice Wallenberg Foundation
- European Research Council under the European Union [259141]
- European Commission
- German Academic Exchange Service (DAAD)
- E.ON AG as part of the E.ON International Research Initiative
- European Research Council (ERC) [259141] Funding Source: European Research Council (ERC)
Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {10 (1) over bar0}, and {11 (2) over bar0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV
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