Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen

Ionic liquid gating of three terminal field effect transistor devices with channels found from SrTiO3(001) single 'crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxyen gas introduced external to the device whereas argon and nitrogen ha e no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced Carrier annihilation.