4.8 Article

High Throughput Ultralong (20 cm) Nanowire Fabrication Using a Wafer-Scale Nanograting Template

期刊

NANO LETTERS
卷 13, 期 9, 页码 3978-3984

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl400209n

关键词

Nanomaterial; nanowire; nanopatterning; wire grid polarizer; top-down; spacer lithography

资金

  1. National Research Foundation of Korea (NRF)
  2. Korean government (MEST) [2011-0028781]
  3. National Research Foundation of Korea [2011-0028781] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Nanowires are being actively explored as promising nanostructured materials for high performance flexible electronics, biochemical sensors, photonic applications, solar cells, and secondary batteries. In particular, ultralong (centimeter-long) nanowires are highly attractive from the perspective of electronic performance, device throughput (or productivity), and the possibility of novel applications. However, most previous works on ultralong nanowires have issues related to limited length, productivity, difficult alignment, and deploying onto the planar substrate complying with well-matured device fabrication technologies. Here, we demonstrate a highly ordered ultralong (up to 20 cm) nanowire array, with a diameter of 50 nm (aspect ratio of up to 4 000 000:1), in an unprecedented large (8 in.) scale (2 000 000 strands on a wafer). We first devised a perfectly connected ultralong nanograting master template on the whole area of an 8 in. substrate using a top-down approach, with a density equivalent to that achieved with e-beam lithography (100 nm). Using this large-area, ultralong, high-density nanograting template, we developed a fast and effective method for fabricating up to 20 cm long nanowire arrays on a plastic substrate, composed of metal, dielectric, oxide, and ferroelectric materials. As a suggestion of practical application, a prototype of a large-area aluminum wire grid polarizer was demonstrated.

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