Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity

We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm(2) V-1 s(-1) for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 X 10(8) A cm(-2). These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.