期刊
NANO LETTERS
卷 13, 期 9, 页码 4068-4074出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl401411r
关键词
Piezochemical effect; pressure; mechanical force; metal-insulator transition; AFM
类别
资金
- U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- National Research Foundation of Korea (NRF)
- Korea government (MSIP) [2013R1A3A2042120]
- Basic Science Research Program through the NRF
- Korea MEST [2011-0025607]
- Dutch Ministry of Economic Affairs
- Army Research Office [W911NF-11-1-0171]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1235870] Funding Source: National Science Foundation
- National Research Foundation of Korea [2011-0025607] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.
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