期刊
NANO LETTERS
卷 13, 期 2, 页码 364-368出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl3033729
关键词
LaAlO3/SrTiO3; 2DEG; mobility; nanowire
类别
资金
- NSF [DMR-1104191]
- ARO [W911NF-08-1-0317, DMR-0906443, NEB-1124131]
- AFOSR [FA9550-10-1-0524]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1124131, 1104191, 0906443] Funding Source: National Science Foundation
Nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3 provides a pathway for reconfigurable, oxide-based nanoelectronics. Four-terminal transport measurements of LaAlO3/SrTiO3 nanowires at room temperature (T = 300 K) reveal an equivalent 2D Hall mobility greatly surpassing that of bulk SrTiO3 and approaching that of n-type Si nanowires of comparable dimensions. This large enhancement of mobility is relevant for room-temperature device applications.
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