期刊
NANO LETTERS
卷 13, 期 9, 页码 4131-4136出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl401636v
关键词
Vertical photodiode; carbon nanotube; thin-film silicon; electric-field enhancement
类别
资金
- National Natural Science Foundation of China [61204077]
- Shenzhen Science and Technology Innovation Commission [JCYJ20120614150521967]
A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.
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