期刊
NANO LETTERS
卷 12, 期 5, 页码 2362-2366出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl3003254
关键词
Quantum dots; quantum dot light-emitting diodes; inverted device structure; electroluminescence; zinc oxide nanoparticles
类别
资金
- National Research Foundation of Korea (NRF) [R0A-2008-000-20108-0]
- National Creative Research Initiative Center for Intelligent Hybrids [2010-0018290]
- Basic Science Research Program [2011-0022716]
- Leading Foreign Research Institute [2011-0030065]
- Korean government (MEST)
- [NRF-2009-C1AAA001-2009-0093282]
- National Research Foundation of Korea [R0A-2008-000-20108-0, 2012M1A2A2671743, 2011-0030065, 2011-0022716, 2010-0018290, 2009-0093319, 2008-0060164] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23 040, 218 800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.
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