期刊
NANO LETTERS
卷 12, 期 12, 页码 6198-6205出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl303065h
关键词
Vanadium dioxide; M2 phase; Al; doping Mott transition FET
类别
资金
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- NSF [ECCS-0925837]
- SISGR-DOE ERKCM67
- U.S. D.O.E., Office of Basic Energy Sciences, Materials Sciences and Engineering Division
A new high-yield method of doping VO2 nanostructures with aluminum is proposed, which renders possible stabilization of the monoclinic M2 phase in free-standing nanoplatelets in ambient conditions and opens an opportunity for realization of a purely electronic Mott transition field-effect transistor without an accompanying structural transition. The synthesized free-standing M2-phase nanostructures are shown to have very high crystallinity and an extremely sharp temperature-driven metal insulator transition. A combination of X-ray micro-diffraction, micro-Raman spectroscopy, energy-dispersive X-ray spectroscopy, and four-probe electrical measurements allowed thorough characterization of the doped nanostructures. Light is shed onto some aspects of the nanostructure growth, and the temperature-doping level phase diagram is established.
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