期刊
NANO LETTERS
卷 12, 期 8, 页码 4025-4031出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl301409h
关键词
Nitrogen-doped graphene; workfunction; bonding; electronic structure; X-ray spectroscopy
类别
资金
- EFRC Center for Re-Defining Photovoltaic Efficiency through Molecule Scale Control [DE-SC0001085]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- AFOSR [DE-AC02-98CH10886, FA9550-11-1-0010]
- National Synchrotron Light Source [DE-AC02-98CH10886]
- ONR under Graphene MURI
- NSF [CHE-0641523]
- NYSTAR
- National Research Foundation of Korea (NRF) [2012-0005859, 2011-0029645]
- Ministry of Education, Science, and Technology
- EU FP7 HYPOMAP network
- National Research Foundation of Korea [2011-0029645] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据