Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V.s)) and a high on/off current ratio (10(5)). Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS2 films make them suitable for use in large-area flexible electronics.