期刊
NANO LETTERS
卷 12, 期 3, 页码 1707-1710出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl3002205
关键词
Electron tunneling; boron nitride; graphene; ultrathin; conductive AFM
类别
资金
- European Research Council
- European Commision
- Engineering and Physical Research Council (U.K.)
- Royal Society
- U.S. Office of Naval Research
- U.S. Air Force Office of Scientific Research
- Korber Foundation
- NRF-CRP [R-144-000-295-281]
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
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