期刊
NANO LETTERS
卷 12, 期 2, 页码 743-748出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl203691d
关键词
Graphene; self-assembly; patterning; large-area; flexible electronics; field effect transistor
类别
资金
- SOLOE Tech, Co. Ltd., Korea
- Korea Ministry of Environment [GT-SWS-11-01-004-0]
- WCU (World Class University) [R31-2008-000-20012-0]
We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.
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