期刊
NANO LETTERS
卷 12, 期 7, 页码 3711-3715出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl301496r
关键词
Graphene; Fermi level; terahertz dynamics; infrared spectroscopy
类别
资金
- Department of Energy [DE-FG02-06ER46308]
- National Science Foundation [OISE-0530220]
- Robert A. Welch Foundation [C-1509]
- JSPS
- ONR MUM [00006766, N00014-09-1-1066]
- AFOSR [FA9550-09-1-0581]
- AFOSR MURI [FA9550-12-1-0035]
- Office Of Internatl Science &Engineering
- Office Of The Director [968405] Funding Source: National Science Foundation
We have fabricated a centimeter-size single-layer graphene device with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10 000 cm(-1)), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods were able to effectively tune the Fermi energy, E-F, which in turn modified the Drude-like intraband absorption in the terahertz as well as the 2E(F) onset for interband absorption in the mid-infrared. These results not only provide fundamental insight into the electromagnetic response of Dirac ferinions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics.
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