期刊
NANO LETTERS
卷 12, 期 8, 页码 4140-4145出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl301699k
关键词
III-V-on-insulator; XOI; two-dimensional membranes; radio frequency transistors; flexible electronics
类别
资金
- DARPA
- MARCO/MSD
- Intel
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
- World Class University program at Sunchon National University
- Sloan Fellowship
- AFOSR [FA9550-10-1-0113]
- KRISS-GRL program
This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f(t)) of similar to 165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of similar to 105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.
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