期刊
NANO LETTERS
卷 12, 期 11, 页码 5821-5828出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl303170m
关键词
Boron nitride; monolayer; scanning tunneling microscopy; interface state; work function; surface potential
类别
资金
- ERC [247299]
- Munich Center for Advanced Photonics (MAP)
- Technische Universitat Munchen-Institute for Advanced Study
- German Excellence Initiative
- Swiss National Science Foundation [20021_140441]
- Swiss National Supercomputing Center [S89]
Ultrathin films of boron nitride (BN) have recently attracted considerable interest given their successful incorporation in graphene nanodevices and their use as spacer layers. to electronically decouple and order functional adsorbates. Here, we introduce a BN monolayer grown by chemical Vapor deposition of borazine on a single crystal Cu support, representing a model system for an electronically patterned but topographically smooth substrate. Scanning tunneling microscopy and spectroscopy experiments evidence a weak bonding Of the single BN sheet to Cu, preserving the insulating character of bulk hexagonal boron nitride combined with a periodic lateral variation of the local work function and the surface potential. Complementary, density functional theory calculations reveal a varying registry of the BN relative to the Cu lattice as origin of this electronic Moire-like superstructure.
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