期刊
NANO LETTERS
卷 12, 期 6, 页码 3062-3067出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl300904k
关键词
Large-area graphene; radio frequency; voltage gain; power gain; integrated circuit; amplifier
类别
资金
- DARPA through CERA [FA8650-08-C-7838]
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.
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