期刊
NANO LETTERS
卷 12, 期 5, 页码 2631-2638出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl301104z
关键词
Quantum dots; band-transport; field-effect transistor; cadmium-selenide; doping; thermal diffusion; thiocyanate
类别
资金
- NSF MRSEC [DMR11-20901]
- NSF [DMR11-20901, DMS-0935165]
- U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0002158]
- NSF-CBET [CBET-0854226]
- Northrop Grumann
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0854226] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1120901] Funding Source: National Science Foundation
- Division Of Mathematical Sciences
- Direct For Mathematical & Physical Scien [0935165] Funding Source: National Science Foundation
We report bandlike transport in solution-deposited, CdSe QD thin-films with room temperature field-effect mobilities for electrons of 27 cm(2)/(V s). A concomitant shift and broadening in the QD solid optical absorption compared to that of dispersed samples is consistent with electron delocalization and measured electron mobilities. Annealing indium contacts allows for thermal diffusion and doping of the QD thin-films, shifting the Fermi energy, filling traps, and providing access to the bands. Temperature-dependent measurements show bandlike transport to 220 K on a SiO2 gate insulator that is extended to 140 K by reducing the interface trap density using an Al2O3/SiO2 gate insulator. The use of compact ligands and doping provides a pathway to high performance, solution-deposited QD electronics and optoelectronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据