期刊
NANO LETTERS
卷 12, 期 3, 页码 1379-1384出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl204024k
关键词
Graphene; metal free; chemical vapor deposition; floating catalyst
类别
资金
- MEXT [19054017]
- NTHU
- Taiwan National Science Council [NSC 97-2112-M-007-016-MY3]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0907642] Funding Source: National Science Foundation
Direct deposition of high-quality graphene layers on insulating substrates such as SiO2 paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO2 with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth.
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