Rolled-up nanomembranes as compact 3D architectures for field effect transistors and fluidic sensing applications

We fabricate inorganic thin film transistors with bending radii of less than 5 mu m maintaining their high electronic performance with on-off ratios of more than 10(5) and subthreshold swings of 160 mV/dec. The fabrication technology relies on the roll-up of highly strained semiconducting nanomembranes, which compacts planar transistors into three-dimensional tubular architectures opening intriguing potential for microfluidic applications. Our technique probes the ultimate limit for the bending radius of high performance thin film transistors.