期刊
NANO LETTERS
卷 12, 期 10, 页码 5262-5268出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl302476h
关键词
SiNW-FETs; biosensor; ultrasensitive; detection limit
类别
资金
- National Basic Research Program of China (973 Program) [2011CB309501, 2012CB933301, 2012CB932600]
- Creative Research of National Natural Science Foundation of China [61021064]
- National Natural Science Foundation of China [60936001, 91123037]
Silicon nanowire (SiNW) field effect transistors (FETs) have emerged as powerful sensors for ultrasensitive, direct electrical readout, and label-free biological/chemical detection. The sensing mechanism of SiNW-FET can be understood in terms of the change in charge density at the SiNW surface after hybridization. So far, there have been limited systematic studies on fundamental factors related to device sensitivity to further make clear the overall effect on sensing sensitivity. Here, we present an analytical result for our triangle cross-section wire for predicting the sensitivity of nanowire surface-charge sensors. It was confirmed through sensing experiments that the back-gated SiNW-FET sensor had the highest percentage current response in the subthreshold regime and the sensor performance could be optimized in low buffer ionic strength and at moderate probe concentration. The optimized SiNW-FET nanosensor revealed ultrahigh sensitivity for rapid and reliable detection of target DNA with a detection limit of 0.1 fM and high specificity for single-nucleotide polymorphism discrimination. In our work, enhanced sensing of biological species by optimization of operating parameters and fundamental understanding for SiNW PET detection limit was obtained.
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