期刊
NANO LETTERS
卷 12, 期 9, 页码 4449-4454出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl3011726
关键词
Boron nitride; Raman; organic residue removal; graphene
类别
资金
- FENA Focus Center
- Center for Probing the Nanoscale, an NSF NSEC [PHY-0830228]
- Office of Naval Research MURI
- W. M. Keck Foundation
- Grants-in-Aid for Scientific Research [23246116, 23310096, 24651148] Funding Source: KAKEN
Hexagonal boron nitride (h-BN) films have attracted, considerable interest as substrates for graphene. (Dean, C. R et al. Nat. Nanotechnol. 2010, 5, 722-6; Wang, H. et al. Electron Device Lett. 2011, 32, 1209-1211; Sanchez-Yamagishi, J. et al. Phys. Rev. Lett, 2012, 108, 1-5.) We study the presence of organic contaminants introduced by standard lithography and substrate transfer processing on h-BN films exfoliated on silicon oxide substrates. Exposure to photoresist processing adds a large broad luminescence peak to the Raman spectrum of the h-BN flake. This signal persists through typical furnace annealing recipes (Ar/H-2). A recipe that successfully removes organic contaminants and results in clean h-BN flakes involves treatment in Ar/O-2 at 500 degrees C.
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