期刊
NANO LETTERS
卷 12, 期 12, 页码 6436-6440出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl3038129
关键词
Epitaxial thin film; flexoelectricity; local transport; nanoscale strain gradient
类别
资金
- Institute of Basic Science (IBS) [EM1203]
- National Research Foundation of Korea (NRF) [2012-0005847, 2011-0005145]
- Korea government (MEST)
- POSCO TJ Park Doctoral Foundation
Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling between electronic transport and the mechanical strain gradient in a dielectric epitaxial thin film. Utilizing the nanoscale strain gradient, we showed the unique functionality of flexoelectricity to generate a rectifying diode effect. Furthermore, using conductive atomic force microscopy, we found that the flexoelectric effect can govern the local transport characteristics, including spatial conduction inhomogeneities, in thin-film epitaxy systems. Consideration of the flexoelectric effect will improve understanding of the charge conduction mechanism at the nanoscale and may facilitate the advancement of novel nanoelectronic device design.
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