期刊
NANO LETTERS
卷 12, 期 11, 页码 5684-5690出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl302880a
关键词
Methristive switching; surrounding effect; planar device; redox; metal oxides
类别
资金
- NEXT Project
- WCU program through the NRF
- MEST [R31-2008-000-10057-0]
- FIRST program
- Kazuchika Ohkura Memorial Foundation
- Grants-in-Aid for Scientific Research [24651138, 20111005] Funding Source: KAKEN
This study demonstrates the effect of surroundings on a memristive switching at nanoscale. by utilizing an open top planar-type device. NiOx and CoOx planar-type devices. have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior: of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically . determines the occurrence of memristive Switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.
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