期刊
NANO LETTERS
卷 12, 期 3, 页码 1362-1366出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl203968j
关键词
Graphene; grain boundary; strain; transport gap; conduction modulation
类别
资金
- ONR
- NSF
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0846563] Funding Source: National Science Foundation
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topological structure of the GB. The transport gap of certain GBs can be significantly widened by strain, which is useful for improving the on off ratio in potential transistor applications and for applications as monolayer strain sensors.
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