期刊
NANO LETTERS
卷 12, 期 6, 页码 2888-2893出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl300482n
关键词
VLS growth; heterostructure; nanowire; InAsP; quantum dot; wurtzite
类别
资金
- KAKENHI [23310097]
- Grants-in-Aid for Scientific Research [23310097] Funding Source: KAKEN
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH3/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.
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