期刊
NANO LETTERS
卷 12, 期 11, 页码 5919-5923出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl303327h
关键词
Nanowire; Qauntum dot; InAs/InP; Single photon source; Chemical beam epitaxy; Selective-area VLS growth
We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor-liquid-solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at lambda similar to 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 mu eV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.
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