4.8 Article

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

期刊

NANO LETTERS
卷 12, 期 3, 页码 1527-1533

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl2043375

关键词

Flexible electronics; thin-film transistors; semiconducting nanotube networks; integrated circuits; radio frequency applications

资金

  1. NSF COINS
  2. NSF
  3. DARPA/DSO Maximum Mobility and Manipulation
  4. Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
  5. World Class University at Sunchon National University
  6. Sloan Fellowship
  7. National Research Foundation of Korea [R31-2012-000-10022-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. Div Of Civil, Mechanical, & Manufact Inn
  9. Directorate For Engineering [0847076] Funding Source: National Science Foundation

向作者/读者索取更多资源

Solution-processed thin-films of semiconducting carbon nanotubes as the channel material for flexible electronics simultaneously offers high performance, low cost, and ambient stability, which significantly outruns the organic semiconductor materials. In this work, we report the use of semiconductor-enriched carbon nanotubes for high-performance integrated circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The as-obtained thin-film transistors (TFTs) exhibit highly uniform device performance with on-current and transconductance up to 15 mu A/mu m and 4 mu S/mu m. By performing capacitance voltage measurements, the gate capacitance of the nanotube TFT is precisely extracted and the corresponding peak effective device mobility is evaluated to be around 50 cm(2)V(-1)s(-1). Wing such devices, digital logic gates including inverters, NAND, and NOR gates with superior bending stability have been demonstrated. Moreover, radio frequency measurements show that cutoff frequency of 170 MHz can be achieved in devices with a relatively long channel length of 4 mu m, which is sufficient for certain wireless communication applications. This proof-of-concept demonstration indicates that our platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据