4.8 Article

Phonon Dominated Heat Conduction Normal to Mo/Si Multilayers with Period below 10 nm

期刊

NANO LETTERS
卷 12, 期 6, 页码 3121-3126

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl300996r

关键词

Nanoscale heat conduction; phonon scattering; metal-dielectric interface; Mo/Si multilayers; thermal interface resistance

资金

  1. KLA-Tencor Corporation
  2. Stanford Graduate Fellowship

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Thermal conduction in periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. Here we argue that two additional mechanisms-quasiballistic phonon transport normal to the metal film and inelastic electron-interface scattering-can also impact conduction in metal/dielectric multilayers with a period below 10 nm. Measurements use the 3 omega method with six different bridge widths down to 50 nm to extract the in- and cross-plane effective conductivities of Mo/Si (2.8 nm/4.1 nm) multilayers, yielding 15.4 and 1.2 W/mK, respectively. The cross-plane thermal resistance is lower than can be predicted considering volume and interface scattering but is consistent with a new model built length scale for phonon-electron energy conversion in the metal. We introduce a criterion for the transition from electron to phonon dominated heat conduction in metal films bounded by dielectrics.

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