期刊
NANO LETTERS
卷 12, 期 6, 页码 3121-3126出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl300996r
关键词
Nanoscale heat conduction; phonon scattering; metal-dielectric interface; Mo/Si multilayers; thermal interface resistance
类别
资金
- KLA-Tencor Corporation
- Stanford Graduate Fellowship
Thermal conduction in periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. Here we argue that two additional mechanisms-quasiballistic phonon transport normal to the metal film and inelastic electron-interface scattering-can also impact conduction in metal/dielectric multilayers with a period below 10 nm. Measurements use the 3 omega method with six different bridge widths down to 50 nm to extract the in- and cross-plane effective conductivities of Mo/Si (2.8 nm/4.1 nm) multilayers, yielding 15.4 and 1.2 W/mK, respectively. The cross-plane thermal resistance is lower than can be predicted considering volume and interface scattering but is consistent with a new model built length scale for phonon-electron energy conversion in the metal. We introduce a criterion for the transition from electron to phonon dominated heat conduction in metal films bounded by dielectrics.
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