期刊
NANO LETTERS
卷 11, 期 8, 页码 3190-3196出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201432g
关键词
Graphene; defects; Raman spectroscopy; excitation energy
类别
资金
- Royal Society
- Brazilian agency CNPq
- Brazilian agency FAPEMIG
- Inmetro
- ERC [NANOPOTS]
- EPSRC [EP/G042357/1]
- EU [RODIN]
- Marie Curie ITN-GENIUS [PITN-GA-2010-264694]
- Nokia Research Centre, Cambridge
- EPSRC [EP/G042357/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G042357/1] Funding Source: researchfish
We present a Raman study of Ar+-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that I the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance similar to 3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据