4.8 Article

Al-Doped Zinc Oxide Nanocomposites with Enhanced Thermoelectric Properties

期刊

NANO LETTERS
卷 11, 期 10, 页码 4337-4342

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl202439h

关键词

Zinc oxide; nanostructured thermoelectrics; aluminum doping; microwave synthesis; heat-harvesting; high figure of merit

资金

  1. IBM through the Rensselaer Nanotechnology Center
  2. NSF [ECCS 1002282]
  3. S3TEC, an Energy Frontier Research Center
  4. U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0001299]
  5. ARC Linkage International [LX0881969]
  6. ARC [DP0879714]
  7. University of Wollongong
  8. Directorate For Engineering
  9. Div Of Electrical, Commun & Cyber Sys [GRANTS:14066211, 1002282] Funding Source: National Science Foundation
  10. Division Of Materials Research
  11. Direct For Mathematical & Physical Scien [0821536] Funding Source: National Science Foundation
  12. Division Of Materials Research
  13. Direct For Mathematical & Physical Scien [GRANTS:13893742] Funding Source: National Science Foundation
  14. Australian Research Council [DP0879714, LX0881969] Funding Source: Australian Research Council

向作者/读者索取更多资源

ZnO is a promising high figure-of-merit (ZT) thermoelectric material for power harvesting from heat due to its high melting point, high electrical conductivity sigma, and Seebeck coefficient alpha, but its practical use is limited by a high lattice thermal conductivity kappa(L). Here, we report Al-containing ZnO nanocomposites with up to a factor of 20 lower kappa(L) than non-nanostructured ZnO, while retaining bulklike alpha and sigma. We show that enhanced phonon scattering promoted by Al-induced grain refinement and ZnAl2O4 nanoprecipitates presages ultralow kappa similar to 2 Wm(-1) K-1 at 1000 K The high a alpha similar to -300 mu VK-1 and high alpha similar to 1-10(4) Omega(-1) m(-1) result from an offsetting of the nanostructuring-induced mobility decrease by high, and nondegenerate, carrier concentrations obtained via excitation from shallow Al donor states. The resultant ZT similar to 0.44 at 1000 K is 50% higher than that for the best non-nanostructured counterpart material at the same temperature and holds promise for engineering advanced oxide-based high-ZT thermoelectrics for applications.

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