期刊
NANO LETTERS
卷 11, 期 5, 页码 1925-1927出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl200017f
关键词
topological insulator; bismuth selenide; surface state; field-effect transistor
类别
资金
- UMD-NSF-MRSEC [DMR-05-20471]
- CNAM
Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300 nm SiO2/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.
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