期刊
NANO LETTERS
卷 11, 期 3, 页码 934-940出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl103001h
关键词
Atomic layer deposition; quantum dots; nanowires; photovoltaics; transmission electron microscopy
类别
资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001060]
- NDSEG Fellowship
- Stanford Graduate Fellowship
Quantum dots provide unique advantages in the design of novel optoelectronic devices owing to the ability to tune their properties as a function of size. Here we demonstrate a new technique for fabrication of quantum dots during the nucleation stage of atomic layer deposition (ALD) of PbS. Islands with sub-10 nm diameters were observed during the initial ALD cycles by transmission electron microscopy, and in situ observations of the coalescence and sublimation behavior of these islands show the possibility of further modifying the size and density of dots by annealing. The ALD process can be used to cover high-aspect-ratio nanostructures, as demonstrated by the uniform coating of a Si nanowire array with a single layer of PbS quantum dots. quantum dot/nanowire composites show a blue shift when the number of ALD cycles unique three-dimensional nanostructured devices such as solar cells. Photoluminescence measurements on the is decreased, suggesting a route to fabricate
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