期刊
NANO LETTERS
卷 12, 期 1, 页码 161-166出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl203249a
关键词
Hexagonal boron nitride; chemical vapor deposition; ammonia borane; copper foil
类别
资金
- National Science Foundation [NSF DMR 0845358]
- Materials, Structures and Device (MSD) Center
- one of the five programs in the focus center research program (FCRP)
- Semiconductor Research Corporation
- MIT/Army Institute for Soldier Nanotechnologies (ISN)
- Graphene Approaches to Terahertz Electronics (GATE) - MURI [N00014-09-1-1063]
Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.
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